Semiconductor wafer storage device

ABSTRACT

The present disclosure describes a method for substrate storage. The method can include respectively placing a plurality of substrates into a plurality of slots formed by a plurality of fin structures on a panel of a storage device. The method can further include binding each of the plurality of substrates to an corresponding one of the plurality of fin structures. The method can further include moving the storage device from a first location to a second location. The method can further include un-binding the plurality of substrates from the plurality of fin structures.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. non-Provisionalpatent application Ser. No. 16/456,118, titled “Semiconductor WaterStorage Device,” filed on Jun. 28, 2019, which claims the benefit ofU.S. Provisional Patent Application No. 62/752,271, titled“Semiconductor Substrate Transport Apparatus and Method,” filed on Oct.29, 2018, the disclosures of which are incorporated by reference intheir entireties.

BACKGROUND

With advances in semiconductor technology, there has been increasingdemand for higher storage capacity, faster processing systems, higherperformance, and lower costs. To meet these demands, the semiconductorindustry continues to scale down the dimensions of semiconductordevices. Such scaling down has increased the complexity of semiconductormanufacturing processes and the demands for contamination control insemiconductor manufacturing systems.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of this disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the common practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1B illustrate isometric views of a storage device, inaccordance with some embodiments.

FIG. 2A illustrates an isometric view of a fin structure of a storagedevice, in accordance with some embodiments.

FIG. 2B illustrates a cross sectional view of a fin structure of astorage device, in accordance with some embodiments.

FIG. 3A illustrates an isometric view of a fin structure of a storagedevice, in accordance with some embodiments.

FIG. 3B illustrates a cross sectional view of a fin structure of astorage device, in accordance with some embodiments.

FIG. 4 illustrates an isometric view of a fin structure of a storagedevice, in accordance with some embodiments.

FIG. 5 illustrates a method for operating a storage device, according tosome embodiments.

Illustrative embodiments will now be described with reference to theaccompanying drawings. In the drawings, like reference numeralsgenerally indicate identical, functionally similar, and/or structurallysimilar elements.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over a second feature in the description that followsmay include embodiments in which the first and second features areformed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Asused herein, the formation of a first feature on a second feature meansthe first feature is formed in direct contact with the second feature.In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition does not in itselfdictate a relationship between the various embodiments and/orconfigurations discussed.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. The spatially relative termsare intended to encompass different orientations of the device in use oroperation in addition to the orientation depicted in the figures. Theapparatus may be otherwise oriented (rotated 90 degrees or at otherorientations) and the spatially relative descriptors used herein maylikewise be interpreted accordingly.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “exemplary,” etc., indicatethat the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of oneskilled in the art to effect such feature, structure or characteristicin connection with other embodiments whether or not explicitlydescribed.

It is to be understood that the phraseology or terminology herein is forthe purpose of description and not of limitation, such that theterminology or phraseology of the present specification is to beinterpreted by those skilled in relevant art(s) in light of theteachings herein.

As used herein, the term “about” indicates the value of a given quantitythat can vary based on a particular technology node associated with thesubject semiconductor device. In some embodiments, based on theparticular technology node, the term “about” can indicate a value of agiven quantity that varies within, for example, 5-30% of the value(e.g., ±5%, ±10%, ±20%, or 30% of the value).

The term “substantially” as used herein indicates the value of a givenquantity that can vary based on a particular technology node associatedwith the subject semiconductor device. In some embodiments, based on theparticular technology node, the term “substantially” can indicate avalue of a given quantity that varies within, for example, ±5% of atarget (or intended) value.

Semiconductor wafers are subjected to different processes (e.g., wetetching, dry etching, ashing, stripping, metal plating, and/or chemicalmechanical polishing) in different processing chambers during thefabrication of semiconductor devices. The wafers are typicallytransported and temporarily stored in batches in wafer storage devicesduring intervals between the different processes. The wafers of eachbatch are stacked vertically in the wafer storage devices and supportedby support frames having multiple separate wafer shelves or slots in thestorage devices. These storage devices, usually referred to asfront-opening unified pods (FOUPs), need to provide a humidity- andcontamination-controlled environment to maintain the integrity of thewafers and/or the fabricated layers on the wafers.

Moisture in the storage devices from surrounding atmosphere can reactwith residual materials on the wafers from the different wafer processesand form defects in the fabricated layers on the wafers that can resultin defective semiconductor devices, and hence, loss in production yield.For example, the wafers subjected to an etching process usingtetrafluoromethane (CF₄) as the etchant can have cryptohalite((NH₄)₂SiF₆) as the residual material. Cryptohalite can react withmoisture in the form of water vapor to produce ammonia (NH₃) andhydrofluoric acid (HF), which can remove portions of the fabricatedlayer materials from the wafers and form defects in the fabricatedlayers.

Besides moisture, particles in the storage device can also result indefective wafers. During transport of the storage device, vibration cancause the wafers to locally displace from their respective wafer slots.Such local displacements of the wafers can raise particles in thestorage device, where the raised particles can randomly fall on surfacesof the wafers. This can cause semiconductor device defects and hencejeopardize an overall yield of the product manufacturing.

The present disclosure provides examples of storage devices configuredto bind the wafers to respective wafer slots to achieve and maintainwafer stability during transport of the storage device. In someembodiments, the storage device can include a protrusion and a bindingdevice configured to bind the wafer to the protrusion. The bindingdevice can be a padding layer attached to the protrusion, where thepadding layer can have at least one opening configured to provide avacuum to hold the wafer over the protrusion. In some embodiments, thebinding device can be a clip configured to clamp the wafer over theprotrusion. An advantage of such storage device is to preventdisplacement of the wafer during transport of the storage device, andtherefore minimize inducing the respective particle contamination onsurfaces of the wafers. As a result, the storage device can improveoverall production yield due to a decrease in defective wafers.

FIGS. 1A and 1B illustrate isometric views of a storage device 100without and with a back cover 102, respectively, according to someembodiments. Storage device 100 can be configured to transport andtemporarily store a batch of substrates (not shown) that may be waitingto be processed for manufacturing semiconductor devices on them. Storagedevice 100 can be configured to maintain a desired relative humidity(e.g., equal to or less than about 13%) and/or contaminant-levelthroughout the interior volume of storage device 100 to protect thewafers and/or fabricated layers on the wafers from moisture andcontaminants.

In some embodiments, storage device 100 can be transported from a firstlocation to a second location of a fabrication facility via a transportmechanism (e.g., a vehicle). The transport mechanism can store an indoormap of the fabrication facility and can include suitable positioningsystems configured to move the transport mechanism in the fabricationfacility following designated routes. For example, the transportmechanism can include a global positioning system (GPS) receiver, areceiving device/program with a Bluetooth-based indoor positioningsystem, and/or a receiving device/program with a WiFi-based indoorpositioning system for navigating the transport mechanism in thefabrication facility according to the indoor map.

Storage device 100 can include a back cover 102, a front panel 104, abase panel 106, and side panels 108 having horizontal fin structures(e.g., in the y-direction) 110 extending outwardly from inner surfacesof each of side panels 108 (illustrated only on one side panel). Finstructures 110 on each side panels 108 can be a single continuous finstructure or can have two or more segments of fin structure. A substratein storage device 100 can be placed in a slot between two adjacent finstructures 110 (e.g., two adjacent fin structures 110 can be separatedin z-direction shown in FIG. 1A), where the substrate can be in contactwith one of two adjacent fin structures 110. Back cover 102, front panel104, base panel 106, and side panels 108 can be coupled to one anotherto form an enclosed volume 101 that holds a batch of substrates (notshown in FIG. 1A). Front panel 104 can be opened during loading andunloading of the batch of substrates, but can remain closed duringpurging of storage device 100 to remove moisture and contaminants frominside storage device 100.

The batch of substrates can be stacked vertically (e.g., in thez-direction) in enclosed volume 101, and each substrate can be supportedby one of horizontal fin structures 110 on each of side panels 108.Vertical spaces (e.g., slots) between adjacent fin structures 110 can begreater than the thickness of the substrate, such that each of thesubstrates can be stacked one on top of another. Each of horizontal finstructures 110 can be configured to support at least a portion of asubstrate sufficiently to prevent warping or damage to the substrate. Insome embodiments, horizontal fin structures 110 can be configured tosupport a peripheral edge portion on opposing sides of each substrate tominimize contact with layers fabricated on the substrates as thesubstrates are loaded into and unloaded from storage device 100.

Base panel 106 can include purge gas inlet and outlet ports 112 and 114,respectively. Even though two inlet ports 112 and two outlet ports 114are shown, base panel 106 can have less than or more than two inlet andoutlet ports similar to respective inlet and outlet ports 112 and 114.Purge gas inlet ports 112 can be configured to allow purge gas to besupplied in enclosed volume 101 to purge moisture and/or contaminantswhile the batch of substrates is in enclosed volume 101 of storagedevice 100. The purge gas can be extracted from enclosed volume 101through purge gas outlet ports 114. In some embodiments, the purge gascan include an inert as, such as nitrogen, argon, neon, or a combinationthereof.

In some embodiments, back cover 102, front panel 104, base panel 106,side panels 108, and horizontal fin structures 110 can include polymericmaterials, such as transparent or opaque polycarbonate, polyvinylchloride, or any other suitable material. In some embodiments, one ormore portions of back cover 102 can have semi-permeable membranes. Thesemi-permeable membranes can have microscopic pores with a pore size ofabout 0.01 μm in diameter. In some embodiments, the diameter of thepores is in the range between 0.002 μm to 0.05 μm. In some embodiments,the diameter of the pores is in the range between 0.005 μm to 0.03 μm.In some embodiments, the diameter of the pores is in the range between0.007 μm to 0.02 μm. The size of the microscopic pores in thesemi-permeable membranes can be sized to block and prevent particulatecontaminants from entering into storage device 100 and to allowcorrosive gas molecules from in storage device 100 to diffuse out.

Referring to FIG. 1A, storage device 100 can further include a purgesystem with a purge gas supply system 116, a purge gas extraction system118, and a control system 120. Purge gas supply system 116 can beconfigured to supply purge gas in enclosed volume 101 through purge gasinlet ports 112 during a purging operation of storage device 100. Insome embodiments, purge gas supply system 116 can be connected tohorizontal fin structures 110 through purge gas inlet port 112. Theblack dashed lines from purge gas supply system 116 to purge gas inletport 112 illustrate the purge gas supply lines. Purge gas can besupplied into enclosed volume 101 when a batch of substrates is loadedand enclosed in storage device 100 to provide a humidity- andcontamination-controlled environment.

In some embodiments, purge gas supply system 116 can be connected tohorizontal fin structures 110 through another purge gas inlet port (notshown in FIG. 1A) similar to inlet port 112.

Referring to FIG. 1A, purge gas extraction system 118 can be coupled topurge gas outlet ports 114 and can be configured to extract the purgegas from in enclosed volume 101 through purge gas outlet ports 114. Insome embodiments, purge gas extraction system 118 can be connected tohorizontal fin structures 110 through purge gas outlet ports 114. Theextraction of the purge gas can be performed by an extraction pump ofpurge gas extraction system 118. The black dashed lines from purge gasoutlet ports 114 to purge gas extraction system 118 illustrate the purgegas extraction lines.

In some embodiments, purge gas extraction system 118 can be connected tohorizontal fin structures 110 through another purge gas outlet port (notshown in FIG. 1A) similar to outlet port 118.

Control system 120 can be coupled to purge gas supply and extractionsystems 116 and 118. In some embodiments, control system 120 can beconfigured to control the operations of purge gas supply and extractionsystems 116 and 118. In some embodiments, control system 120 cansimultaneously activate and/or deactivate purge gas supply andextraction systems 116 and 118. In some embodiments, control system 120can provide a time delay between the activation of purge gas supply andextraction systems 116 and 118 and/or the deactivation of purge gassupply and extraction systems 116 and 118.

The activation and/or deactivation of purge gas supply and extractionsystems 116 and 118 can include controlling the purge gas supply topurge gas inlet ports 112 and the operation of the extraction pump,respectively. In some embodiments, to activate and deactivate purge gassupply system 116, control system 120 can provide activation anddeactivation signals that open and close a gas supply valve of purge gassupply system 116 to supply and block, respectively, the flow of purgegas to purge gas inlet port 112. In some embodiments, to activate anddeactivate purge gas extraction system 118, control system 120 canprovide activation and deactivation signals that activate and deactivatethe extraction pump, and open and close a valve of purge gas extractionsystem 118 to allow and block, respectively, the flow of purge gas outof enclosed volume 101 through purge gas outlet ports 114.

The operations of purge gas supply and extraction systems 116 and 118can be controlled by control system 120 based on one or more signalsthat indicate the presence of substrates in storage device 100, a motionstatus (e.g., in transport or stationary) of storage device 100, theposition of front panel 104, the pressure of purge gas in enclosedvolume 101, the duration of purging, the relative humidity in storagedevice 100, and/or the contamination level (e.g., corrosive gas level)in storage device 100. In some embodiments, control system 120 canprovide activation signals to purge gas supply and extraction systems116 and 118 (e.g., simultaneously or with a time delay) in response toreceiving sensor signals that indicate the presence of substrates instorage device 100 and a closed position of front panel 104. Similarly,deactivation signals can be provided by control system 120 to purge gassupply and extraction systems 116 and 118 (e.g., simultaneously or witha time delay) in response to receiving sensor signals that indicate theabsence of substrates in storage device 100 and the close position offront panel 104. In some embodiments, deactivation signals can beprovided by control system 120 to purge gas supply and extractionsystems 116 and 118 simultaneously in response to receiving a sensorsignal that indicates an open position of front panel 104. These sensorsignals can be provided by one or more sensors (not shown) positioned onor in storage device 100.

The activation and deactivation signals can be provided by controlsystem 120 based on the duration of purging and/or relative humidity inenclosed volume 101. In some embodiments, control system 120 canschedule purge gas supply and extraction systems 116 and 118 to remainactivated and/or deactivated for a desired time period when substratesare present in storage device 100. However, purge gas supply andextraction systems 116 and 118 can be activated from a scheduled orunscheduled deactivated state when substrates are present in response tocontrol system 120 receiving a sensor signal from humidity and/or gassensors indicating that the relative humidity and/or the contaminationlevel, respectively, in enclosed volume 101 is above a desired value.Similarly, purge gas supply and extraction systems 116 and 118 can bedeactivated from a scheduled or unscheduled activated state whensubstrates are present in response to control system 120 receiving asensor signal from the humidity and/or gas sensors indicating that therelative humidity and/or the contamination level, respectively, inenclosed volume 101 is below the desired value.

The activation and deactivation signals can also be provided by controlsystem 120 based on storage device 100 and the motion status of storagedevice 100. For example, control system 120 can provide deactivationsignals to purge gas supply system 116 and activation signals to purgegas extraction system 118 in response to storage device 100 being intransit. Similarly, control system 120 can provide activation signals topurging gas supply system 116 and deactivation signals to purge gasextraction system 118 in response to storage device 100 arriving at adesignated location and stationary.

In some embodiments, other independent purging gas supply and extractionsystems (not shown in FIG. 1A), similar to purging gas supply andextraction systems 116 and 118, can be connected to fin structures 110.Control system 120 can be coupled and configured to control bothindependent purging gas supply and extraction systems similar to thediscussion above.

In some embodiments, control system 120 can be configured to control finstructures 110 to bind or unbind the substrates based on the presence ofsubstrates in storage device 100 and the motion status of storage device100. For example, control system 120 can control a mechanical motion offin structures 110 to bind substrates in response to the substratesbeing placed in storage device 100 or storage device 100 being intransport. Similarly, control system 120 can control the mechanicalmotion of fin structures 110 to unbind substrates in response tosubstrates being withdrawn from storage device 100, or storage device100 arriving at a designated location and stationary.

FIG. 2A illustrates an isometric view of a fin structure 200 configuredto hold a substrate (not shown in FIG. 2A) in storage device 100 via avacuum suction, according to some embodiments. Fin structure 200 can bean embodiment of fin structure 110 disposed on side panel 108, where thesubstrate can be placed between two adjacent fin structures 200 (e.g.,two adjacent fin structures separated vertically in z-direction shown inFIG. 2A). Fin structure 200 can include a protrusion 202 configured tosupport the substrate, and a padding layer 204 configured to provide thevacuum suction to bind the substrate over protrusion 202. Protrusion 202can be disposed at inner surfaces of side panels 108 and extend inwardlytowards enclosed volume 101. Padding layer 204 can be disposed overprotrusion 202, where padding layer 204 can be located betweenprotrusion 202 and the substrate. For example, padding layer 204 can beattached to protrusion 202 via an adhesive, a tape, or a mechanical part(e.g., a clamp), and the substrate can be placed over padding layer 204.A top surface of padding layer 204 can have an opening 206 configured tobe covered by the substrate. Padding layer 204 can further include a gaspipe 208 interconnected to opening 206. In some embodiments, paddinglayer 204 can have multiple openings 206 and multiple gas pipes 208,while each or several of the multiple openings 206 can be interconnectedto each or several of the multiple gas pipes 208.

In some embodiments, each side panels 108 of storage device 100 can havea respective fin structure 200, where the respective protrusions 202 ofeach of fin structures 200 can be a continuous protrusion or have two ormore segments of protrusions.

In some embodiments, each of side panels 108 of storage device 100 canhave a respective fin structure 200, where the respective padding layers204 of each of fin structures 200 can be a continuous padding layer orhave two or more segments of padding layers.

In some embodiments, protrusion 202 can be made of polymeric materials,such as transparent or opaque polycarbonate, polyvinyl chloride, orother suitable material.

In some embodiments, padding layer 204 can be made of a membrane, aplastic sheet, a tape, a polymer film, or other suitable material. Insome embodiments, a thickness of padding layer 204 can be between about0.5 mm and about 2.5 mm.

In some embodiments, a diameter of opening 206 can be between about 0.5mm and about 2.0 mm.

In some embodiments, a diameter of gas pipe 208 can be between about 0.5mm and about 2.0 mm.

FIG. 2B illustrates a cross sectional view of fin structure 200 alongline A-A′ shown in FIG. 2A, according to some embodiments. As shown inFIG. 2B, padding layer 204 can have a bottom surface 222 configured toattach to a portion of protrusion 202, a top surface 224 opposite tobottom surface 222, and a side surface 226 between bottom surface 222and top surface 224. Opening 206 can be disposed at top surface 224,where a substrate 210 in storage device 100 can be in contact with topsurface 224 and covering opening 206. Gas pipe 208 can be disposed atside surface 226 and interconnected to opening 206. Gas pipe 208 can befurther connected to the previously described purging gas supply and/orextraction systems (e.g., purge gas supply and extraction systems 116and 118) to regulate the vacuum suction through opening 206 tobind/unbind substrate 210 with/from protrusion 202. For example, thevacuum suction can bind substrate 210 over protrusion 202, through gaspipe 208 and opening 206, by activating the purging gas extractionsystem. Such binding provided by the vacuum suction through paddinglayer 204 can prevent displacement or vibration of substrate 210 instorage device 100. In some embodiments, the vacuum suction can becorresponded to a pressure difference between about 0.5 standardatmosphere and about 0.8 standard atmosphere. The vacuum suction can bereleased to unbind substrate 210 from protrusion 202 by eitherdeactivating the purging gas extraction system or activating the purginggas supply system. In some embodiments, gas pipe 208 can be connected toan exhaust shaft (not shown in FIG. 2B) configured to provide or disablethe vacuum suction to hold or release substrate 210.

FIG. 3A illustrates an isometric view of a fin structure 300, accordingto some embodiments. The discussion of fin structure 200 applies to finstructure 300 unless mentioned otherwise. Fin structure 300 can includeprotrusion 202 and a padding layer 304 configured to bind the substrateover protrusion 202. Padding layer 304 can be disposed over protrusion202 and can further include gas pipe 208, where an outer surface 324 ofpadding layer 304 can have at least one opening 206 interconnected togas pipe 208. The description of elements in FIGS. 2A-2B applies toelements with the same annotations in FIG. 3A unless mentionedotherwise.

FIG. 3B illustrates a cross sectional view of fin structure 300 alongline B-B′ shown in FIG. 3A, according to some embodiments. As shown inFIG. 3B, padding layer 304 can be configured to encapsulate or capprotrusion 202. For example, padding layer 304 can have an inner surface322 opposite to outer surface 324, in which inner surface 322 cancontact and enclose protrusion 202. Padding layer 304 can encapsulateprotrusion 202 via an adhesive, a tape, or a mechanical part (e.g., aclamp). Padding layer 304 can be made of the same or similar material aspadding layer 204. In some embodiments, padding layer 304 can be made ofan elastic material (e.g., a rubber), where padding layer 304 canencapsulate or cap protrusion 202 via an elasticity associated with theelastic material.

FIG. 4 illustrates an isometric view of a fin structure 400 configuredto hold a substrate in storage device 100 via pressure retention,according to some embodiments. Fin structure 400 can be an embodiment offin structure 110 of FIG. 1A, where the substrate (e.g., substrate 210)can be placed between two adjacent fin structures 400 (e.g., twoadjacent fin structures 400 separated in z-direction shown in FIG. 4 ).Fin structure 400 can include protrusion 202 and a clip 404 configuredto provide the pressure retention to bind a portion of substrate 210over protrusion 202. Clip 404 can be disposed over protrusion 202, wheresubstrate 210 can be placed between protrusion 202 and dip 404. Clip 404can be connected to control system 120, where control system 120 cancontrol a movement of clip 404. For example, in response that substrate210 is placed over protrusion 202, control system 120 can control dip404 to move downward (e.g., direction 411) to provide the pressureretention to clamp and bind substrate 210 onto protrusion 202. Suchpressure retention provided by clip 404 can prevent displacement orvibration of substrate 210 in storage device 100. Control system 120 canalso control clip 404 to move upward (e.g., opposite to direction 411)to release the pressure retention to unbind substrate 210 fromprotrusion 202. In some embodiments, clip 404 can be mechanicallycoupled to a shaft (not shown in FIG. 4 ), where the shaft can controlthe movement of clip 404 to bind/unbind substrate 210 with/fromprotrusion 202. In some embodiments, clip 404 can be mechanicallycoupled to any mechanical components to control the movement of clip404.

In some embodiments, fin structures 400 can further include paddinglayer 204 (not shown in FIG. 4 ) disposed over protrusion 202 toregulate the vacuum suction to bind/unbind the substrate.

In some embodiments, clip 404 can be made of similar material asprotrusion 202. Clip 404 can be a single continuous pad, where a size ofclip 404 can be similar to or smaller than that of protrusion 202. Clip404 can include segments of pads (not shown in FIG. 4 ), where eachsegment can have a similar or smaller size than that of protrusion 202.

In some embodiments, each side panels 108 of storage device 100 can havea respective fin structure 400, where the respective protrusions 202 andclips 404 of each fin structure 400 can be a continuous protrusion orhave two or more segments of protrusions 202 and clips 404,respectively. In some embodiments, each of side panels 108 can includefin structure 200 or fin structure 400, where the respective protrusions202 of each fin structure 200 or fin structure 400 can be a continuousprotrusion or have two or more segments of protrusions.

FIG. 5 is an exemplary method 500 for operating a storage device, wherethe storage device configured to bind and/or unbind substrates,according to some embodiments. This disclosure is not limited to thisoperational description. It is to be appreciated that additionaloperations may be performed. Moreover, not all operations may be neededto perform the disclosure provided herein. Further, some of theoperations may be performed simultaneously, or in a different order thanshown in FIG. 5 . In some implementations, one or more other operationsmay be performed in addition to or in place of the disclosed operations.For illustrative purposes, method 500 is described with reference to theembodiments of FIGS. 1-4 . However, method 500 is not limited to theseembodiments.

Exemplary method 500 begins with operation 510, where a substrate isprovided at a first location. The substrate can include any suitablematerial for forming semiconductor device structures. For example, thesubstrate can include silicon, silicon germanium, silicon carbide, SOI,GOI, glass, quartz, gallium nitride, gallium arsenide, plastic sheetand/or other suitable I-V compound. The first location can be any placein a fabrication facility and can be where the substrate is originallylocated. For example, the first location can be a warehouse whichprovides the substrate. The substrate can also be a semi-finishedproduct from a semiconductor device fabrication process station. Forexample, the first location can be any place where a semiconductordevice fabrication station (e.g., a lithography station) is located. Thesemiconductor device fabrication station can provide the substrate whichhas gone through its respective fabrication processing steps.

In operation 520, the substrate is placed into a storage device. Thestorage device can include multiple side panels and multiple finstructures disposed at inner surfaces of each side panels. The substratecan be deposited into a slot between two adjacent fin structures of themultiple fin structures. Referring to FIG. 1 , for example, the multiplefin structures 110 can be disposed at inner surface of each side panels108, where each fin structures 110 can be separated from each othervertically in the z-direction. The substrate can be horizontally (e.g.the substrate's top surface is parallel to the x-y plane) placed in aslot between two adjacent fin structures 110. In some embodiments, thesubstrate can be placed into the storage device via a robotictransferring arm of a semiconductor fabrication apparatus. In someembodiments, the substrate can be manually placed into the storagedevice. In some embodiments, multiple substrates can be placed into therespective slots of the storage device simultaneously or separately.

In operation 530, the substrate is bound to the storage device. Afterplacing the substrate into the storage device, the substrate can be incontact with fin structures. The substrate can be further bound to thefin structures via a vacuum suction provided by a binding device.Referring to FIGS. 2A-2B, for example, the binding device can be paddinglayer 204 with at least one opening 206 at its top surface, where thesubstrate can be placed over padding layer 204 to cover opening 206. Avacuum can be applied through gas pipe 208 and opening 206 to providethe vacuum suction hold the substrate over padding layer 204 and thusbind the substrate to the storage device. In some embodiments, multiplesubstrates, placed in the respective slots, can be simultaneously boundto the storage device via the vacuum suction.

In some embodiments, the substrate can be bound to the one of the twoadjacent fin structures via a pressure retention provided by the bindingdevice. Referring to FIG. 4 , for example, the binding device can beclip 404, where the substrate can be placed between protrusion 202 andclip 404. Clip 404 can be moved towards protrusion 202 and provide thepressure retention to clamp the substrate over protrusion 202 andtherefore bind the substrate to the storage device. In some embodiments,multiple substrates, deposited in the respective slots, can besimultaneously bound to the storage device via the respective pressureretention provided by respective dips 404.

In some embodiments, a first group of substrates placed in therespective slots can be bound to the storage device via the vacuumsuction, while a second group of substrates placed in another respectiveslots can be bound to the storage device via pressure retention. In someembodiments, a substrate placed in the storage device can be bound tothe storage device via both the vacuum suction and the pressureretention.

In operation 540, the storage device is moved to a second location ofthe fabrication facility. The storage device can be transferred to atransport mechanism at the first location of the fabrication facility.The transport mechanism can then move to the second location based on anindoor map (stored in the transport mechanism). In some embodiments, thetransport mechanism can include a vehicle or a robotic arm. In someembodiments, the storage device can be moved to the second location viaa manually-controlled transport mechanism. In some embodiments, thesecond location can be the same as the first location, such that thesubstrate remains stored in the storage device at the first location(e.g., storage device remains still). Additional details of operation540 are above with respect to the description of FIGS. 1A-1B.

In operation 550, the substrate is unbound from the storage device.After the storage device reaches the second location, the binding devicecan release the substrate from attaching to the fin structures. In someembodiments, the releasing of the substrate can include deactivating thevacuum suction or pressure retention provided by the binding device. Thereleased substrate can be subsequently withdrawn from the slot of thestorage device and be delivered to a warehouse or another semiconductordevice fabrication station to continue the respective fabricationprocess. Additional details of operation 550 are above with respect tothe description of FIGS. 2A-4 .

The present disclosure provides a storage device and a method forstoring substrates that employs binding devices to bind the substrates.According to some embodiments, the storage device can have multiple sidepanels and multiple fin structures at inner surfaces of the side panels.Each of the fin structures can include a protrusion and a binding deviceassociated with the protrusion. In some embodiments, the binding devicecan be a padding layer attached to the protrusion, where a top surfaceof the padding layer can have at least one opening. The substrate can beplaced and adhere to the padding layer via a vacuum suction through theopening. In some embodiments, the binding device can be a clip, wherethe substrate can be clamped on the protrusion with the clip. Suchstorage device with binding devices can prevent displacement orvibrations of the substrate during transport of the storage device, thusreducing the respective particle contamination, decreasing defectivesubstrates, and improving overall production yield of devicemanufacturing.

In some embodiments, a storage device can include a first and a secondmultiples of panels configured to form an enclosed volume, and finstructures disposed at inner surfaces of the second multiples of panels.Each of the fin structures, configured to hold a substrate, can includea protrusion extending inwardly into the enclosed volume, and a bindingdevice disposed over the protrusion, where the binding device can beconfigured to bind the substrate over the protrusion.

In some embodiments, a storage device can include a panel, and a finstructure configured to hold a wafer and disposed on a side surface ofthe panel. The fin structure can include a protrusion extendingoutwardly from the side surface of the panel, and a padding layerattached to the fin structure, where the padding layer can include oneor more openings configured to provide a vacuum to bind the wafer overthe protrusion.

In some embodiments, a method for substrate storage can includeproviding one or more substrates at a first location, placing the one ormore substrates into a storage device where the storage device caninclude multiple fin structures, and binding the one or more substratesto the storage device via binding devices associated with each of themultiple fin structures.

The foregoing disclosure outlines features of several embodiments sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art should also realize thatsuch equivalent constructions do not depart from the spirit and scope ofthe present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A method, comprising: placing a substrate withina storage device, wherein the substrate is placed within a slot betweentwo adjacent fin structures of a plurality of fin structures wherein,the plurality of fin structures are disposed on a side surface of apanel of the storage device; and binding the substrate to one of the twoadjacent fin structures by providing a vacuum suction via one or moreopenings in a padding laver associated with each of the plurality of finstructures.
 2. The method of claim 1, further comprising un-binding thesubstrate from the one of the two adjacent fin structures.
 3. The methodof claim 1, wherein binding the substrate to one of the two adjacent finstructures comprises applying a vacuum via an opening in a padding layerassociated with the one of the two adjacent fin structures.
 4. Themethod of claim 1, further comprising activating a gas extraction systemto provide a vacuum to bind the substrate to the one of the two adjacentfin structures.
 5. The method of claim 1, further comprising supportinga peripheral edge portion of the substrate with the plurality of finstructures.
 6. The method of claim 1, further comprising binding thesubstrate to one of the two adjacent fin structures by applying vacuumthrough a gas pipe.
 7. A method, comprising: placing a plurality ofsubstrates in a plurality of slots formed by a plurality of finstructures, wherein a slot is formed between two adjacent verticallyspaced fin structures; and binding each of the plurality of substratesto a corresponding one of the plurality of fin structures by applying avacuum suction via one or more openings in padding layer associated withthe corresponding one of the plurality of fin structures.
 8. The methodof claim 7, wherein binding each of the plurality of substratescomprises activating a gas extraction system to provide a vacuum suctionvia a padding layer associated with each of the plurality of finstructures.
 9. The method of claim 8, further comprising providing thevacuum suction to the one or more openings through a gas pipe.
 10. Themethod of claim 8, further comprising releasing the plurality ofsubstrates from the plurality of fin structures by deactivating thevacuum suction.
 11. The method of claim 7, further comprising placing atleast a portion of a substrate of the plurality of substrates on theplurality of fin structures.
 12. The method of claim 7, furthercomprising: binding one or more of the plurality of substrates to aplurality of slots using a vacuum suction.
 13. The method of claim 7,wherein binding each of the plurality of substrates to the correspondingone of the plurality of fin structures comprises: placing each of theplurality of substrates in contact with a top surface of the paddinglayer; and covering the one or mom openings in the padding layer.
 14. Amethod, comprising: depositing one or more substrates into respectiveone or more slots between two adjacent protrusions of a plurality ofprotrusions; supporting a peripheral edge of a substrate of the one ormore substrates between the one or more slots; binding the one or moresubstrates to a binding device covering the plurality of protrusions,wherein the binding device provides a vacuum suction via one or moreopenings in padding layer associated with each of the plurality ofprotrusions; and releasing the one or more substrates from the bindingdevice.
 15. The method of claim 14, wherein binding the one or moresubstrates comprises applying a vacuum suction through an opening in atop surface of the binding device.
 16. The method of claim 14, whereinbinding and releasing the one or more substrates comprises regulating avacuum suction.
 17. The method of claim 14, further comprisingactivating a gas extraction system to provide a vacuum to bind the oneor more substrates to the binding device.
 18. The method of claim 14,further comprising vacuum binding the one or more substrates to thebinding device.
 19. The method of claim 14, further comprisingdeactivating a gas extraction system to release a vacuum to release thesubstrate from the plurality of protrusions.
 20. The method of claim 14,wherein binding the one or more substrates comprises applying a vacuumthrough a gas pipe connected to the binding device.